METHOD OF MANUFACTURING SEMICONDOCTOR MEMORY DEVICE

The present technology includes a step of forming a first sacrificial layer on a substrate by a first deposition method; a step of injecting ions into the first sacrificial layer; a step of alternately stacking interlayer dielectrics and second sacrificial layers by a second deposition method; a ste...

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Bibliographic Details
Main Authors KANG, YOUNG MEE, HAN, KYOUNG SIK
Format Patent
LanguageEnglish
Korean
Published 10.03.2014
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The present technology includes a step of forming a first sacrificial layer on a substrate by a first deposition method; a step of injecting ions into the first sacrificial layer; a step of alternately stacking interlayer dielectrics and second sacrificial layers by a second deposition method; a step of forming a slit penetrating the interlayer dielectrics, the second sacrificial layers, and the first sacrificial layer; and a step of forming a conductive layer trenches by removing the first sacrificial layer and the second sacrificial layers which is opened through the slit. [Reference numerals] (AA) Injecting ion; (BB) Cell area Y-Z cross-section; (CC) Cell area X-Z cross-section
Bibliography:Application Number: KR20120095059