PRESS-FIT DIODE WITH HIGH THERMOSHOCK CHANGE RESISTANCE
The present invention relates to a press-fit diode having a semiconductor chip fixed by a connection layer between a base and a head wire. The press-fit diode retards from the circular circumference of the outside edge of a chip at least in front of a chip. A first plastic layer of a circular type i...
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Main Authors | , , |
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Format | Patent |
Language | English Korean |
Published |
18.02.2014
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Subjects | |
Online Access | Get full text |
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Abstract | The present invention relates to a press-fit diode having a semiconductor chip fixed by a connection layer between a base and a head wire. The press-fit diode retards from the circular circumference of the outside edge of a chip at least in front of a chip. A first plastic layer of a circular type insulation property is in a region which is out of the connection layer of the semiconductor layer. A second plastic layer of a completely circular type insulation property is provided in the radial direction of the first plastic layer overlapped with the end region of an inner part. |
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AbstractList | The present invention relates to a press-fit diode having a semiconductor chip fixed by a connection layer between a base and a head wire. The press-fit diode retards from the circular circumference of the outside edge of a chip at least in front of a chip. A first plastic layer of a circular type insulation property is in a region which is out of the connection layer of the semiconductor layer. A second plastic layer of a completely circular type insulation property is provided in the radial direction of the first plastic layer overlapped with the end region of an inner part. |
Author | KNUPFER THOMAS GOERLACH ALFRED SPITZ RICHARD |
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Notes | Application Number: KR20130093503 |
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Snippet | The present invention relates to a press-fit diode having a semiconductor chip fixed by a connection layer between a base and a head wire. The press-fit diode... |
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SubjectTerms | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
Title | PRESS-FIT DIODE WITH HIGH THERMOSHOCK CHANGE RESISTANCE |
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