PRESS-FIT DIODE WITH HIGH THERMOSHOCK CHANGE RESISTANCE

The present invention relates to a press-fit diode having a semiconductor chip fixed by a connection layer between a base and a head wire. The press-fit diode retards from the circular circumference of the outside edge of a chip at least in front of a chip. A first plastic layer of a circular type i...

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Bibliographic Details
Main Authors KNUPFER THOMAS, SPITZ RICHARD, GOERLACH ALFRED
Format Patent
LanguageEnglish
Korean
Published 18.02.2014
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The present invention relates to a press-fit diode having a semiconductor chip fixed by a connection layer between a base and a head wire. The press-fit diode retards from the circular circumference of the outside edge of a chip at least in front of a chip. A first plastic layer of a circular type insulation property is in a region which is out of the connection layer of the semiconductor layer. A second plastic layer of a completely circular type insulation property is provided in the radial direction of the first plastic layer overlapped with the end region of an inner part.
Bibliography:Application Number: KR20130093503