THIN FILM DEPOSITION USING MICROWAVE PLASMA

A method of processing a substrate in a processing chamber is provided. The method generally includes applying a microwave power to an antenna coupled to a microwave source disposed within the processing chamber, wherein the microwave source is disposed relatively above a gas feeding source configur...

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Bibliographic Details
Main Authors ANWAR SUHAIL, WON TAE KYUNG, PARK BEOM SOO, CHOI, SOO YOUNG, CHO SEON MEE, NOMINANDA HELINDA, WHITE JOHN M, KUDELA JOZEF
Format Patent
LanguageEnglish
Korean
Published 13.02.2014
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method of processing a substrate in a processing chamber is provided. The method generally includes applying a microwave power to an antenna coupled to a microwave source disposed within the processing chamber, wherein the microwave source is disposed relatively above a gas feeding source configured to provide a gas distribution coverage covering substantially an entire surface of the substrate, and exposing the substrate to a microwave plasma generated from a processing gas provided by the gas feeding source to deposit a silicon-containing layer on the substrate at a temperature lower than about 200 degrees Celsius, the microwave plasma using a microwave power having a power density of about 500 milliWatts/cm2 to about 5,000 milliWatts/cm2 at a frequency of about 1 GHz to about 10 GHz.
Bibliography:Application Number: KR20137019348