SEMICONDUCTOR MEMORY DEVICES AND METHODS FOR FABRICATING THE SAME

The present invention relates to a semiconductor memory device and a method for fabricating the same. The semiconductor memory device includes gates vertically laminated on the upper surface of a substrate having an epi layer, a vertical channel vertically penetrating the gates and electrically conn...

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Bibliographic Details
Main Authors KIM, JU HYUNG, HWANG, KI HYUN, LEE, JAE GOO, NAM, PHIL OUK, KIM, CHAE HO, AHN, JAE YOUNG, YANG, JUN KYU, LEE, WOON KYUNG, JANG, BYONG HYUN
Format Patent
LanguageEnglish
Korean
Published 12.02.2014
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The present invention relates to a semiconductor memory device and a method for fabricating the same. The semiconductor memory device includes gates vertically laminated on the upper surface of a substrate having an epi layer, a vertical channel vertically penetrating the gates and electrically connected to the epi layer, and an information storage layer formed between the vertical channel and the gates. The upper surface of the epi layer may be in a level between the lower surface of the lowermost one of the gates and the upper surface of the substrate.
Bibliography:Application Number: KR20120084086