MEMORY DEVICE IN PARTICULAR EXTRA ARRAY CONFIGURED THEREIN FOR CONFIGURATION AND REDUNDANCY INFORMATION

Disclosed is a device comprising a plurality of second word lines; in which respective second word lines arranged one related to first word lines; in which a third direction is opposite for a second direction. A plurality of first word lines is terminated between the second terminals and the first t...

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Bibliographic Details
Main Authors PAGLIATO MARUO, BARTOLI SIMONE, MINA DIEGO DELLA
Format Patent
LanguageEnglish
Korean
Published 04.02.2014
Subjects
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Summary:Disclosed is a device comprising a plurality of second word lines; in which respective second word lines arranged one related to first word lines; in which a third direction is opposite for a second direction. A plurality of first word lines is terminated between the second terminals and the first terminals and is extended from one related to the first terminals to respective second terminals along with the second direction. The second direction is vertical with the first direction. The first word lines are extended from one related to the second terminals to the respective first terminals along with the third direction. The second word lines are terminated around one end related to the first word lines. [Reference numerals] (200) Page buffer sensing circuit; (230) Sensing circuit
Bibliography:Application Number: KR20130167897