ELECTRODE STRUCTURES FOR ARRAYS OF NANOSTRUCTURES AND METHODS THEREOF

A thermoelectric device and methods thereof. The thermoelectric device includes nanowires, a contact layer, and a shunt. Each of the nanowires includes a first end and a second end. The contact layer electrically couples the nanowires through at least the first end of each of the nanowires. The shun...

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Main Authors KARRI MADHAV A, MUCKENHIRN SYLVAIN, MATUS GABRIEL, KARDEL JUSTIN TYNES, WACKER BARBARA, SCULLIN MATTHEW L, LORIMER ADAM
Format Patent
LanguageEnglish
Korean
Published 29.01.2014
Subjects
ELECTRICITY
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Summary:A thermoelectric device and methods thereof. The thermoelectric device includes nanowires, a contact layer, and a shunt. Each of the nanowires includes a first end and a second end. The contact layer electrically couples the nanowires through at least the first end of each of the nanowires. The shunt is electrically coupled to the contact layer. All of the nanowires are substantially parallel to each other. A first contact resistivity between the first end and the contact layer ranges from10-13 O-m2 to 10-7 O-m2. A first work function between the first end and the contact layer is less than 0.8 electron volts. The contact layer is associated with a first thermal resistance ranging from 10-2 K/W to 1010 K/W.
Bibliography:Application Number: KR20137022698