CAPACITOR WITH HOLE STRUCTURE AND MENUFACTURING METHOD THEREOF

• Main Authors: KANG, YOUNG SIK, LEE, YEONG GYU
• Format: Patent
• Language: English; Korean
• Published: 29.01.2014
• Subjects: BASIC ELECTRIC ELEMENTS; CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES ORLIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The present invention relates to a capacitor with a hole structure and a manufacturing method thereof. According to one embodiment of the present invention, a capacitor with a hole structure and a manufacturing method thereof are proposed, the capacitor comprising: a substrate layer in which a plurality of through holes are formed; a lower electrode layer including a first conductive layer having low resistivity and a second conductive layer having resistivity higher than the resistivity of the first conductive layer, wherein the first conductive layer is formed on an inner wall of the through hole, and the second conductive layer is formed on the first conductive layer; a thin film dielectric layer formed on the lower electrode layer; and an upper electrode layer including a third conductive layer and a fourth conductive layer having resistivity lower than the resistivity of the third conductive layer, wherein the third conductive layer is formed on the thin film dielectric layer, and the fourth conductive layer is formed on the third conductive layer.