DIELECTRIC CERAMIC COMPOSITION AND ELECTRONIC DEVICE

The objective of the present invention is to provide a dielectric ceramic composition showing a high alternating current breakdown voltage as maintaining several characteristics good and is for the dielectric ceramic composition to provide an electronic component applied in a dielectric layer. In or...

Full description

Saved in:
Bibliographic Details
Main Authors MASARU ABE, ZHUANG JIANYONG, JINTAO HUANG, FAN ZHANG, GUIBIN GE, DAISUKE SATO, MASAKAZU HIROSE, KAZUYA MUTO
Format Patent
LanguageEnglish
Korean
Published 24.12.2013
Subjects
Online AccessGet full text

Cover

Loading…
More Information
Summary:The objective of the present invention is to provide a dielectric ceramic composition showing a high alternating current breakdown voltage as maintaining several characteristics good and is for the dielectric ceramic composition to provide an electronic component applied in a dielectric layer. In order to achieve the objective of the present invention, the dielectric ceramic composition contains a compound expressed as a composition equation Ba_x(Ti_1-ySn_y)O_3 and an oxide of Zn, in which x is 0.970-0.996 and y is 0.050-0.130. The amount of contained oxide of Zn is 1.5-8.0 wt% by ZnO conversion as to compound 100 wt%. It is desirable that the dielectric ceramic composition contains an oxide of Nb additionally, and the amount of contained oxide of Nb is equal to or less than 0.6 wt% by Nb_2O_5 conversion as to compound 100wt%. (과제) 여러 가지 특성을 양호하게 유지하면서, 높은 교류 파괴 전압을 나타내는 유전체 자기 조성물을 제공하는 것 및 그 유전체 자기 조성물이 유전체층에 적용된 전자 부품을 제공하는 것. (해결 수단) 조성식 Ba(TiSn)O으로 나타내는 화합물과, Zn의 산화물을 함유하는 유전체 자기 조성물이다. 조성식 중의 x는 0.970∼0.996이고, y는 0.050∼0.130이다. Zn의 산화물 함유량이 화합물 100중량부에 대해서 ZnO 환산으로 1.5∼8.0중량부이다. 그 유전체 자기 조성물은 추가로 Nb의 산화물을 함유하고, Nb의 산화물 함유량이 화합물 100중량부에 대해서 NbO환산으로 0.6중량부 이하인 것이 바람직하다.
Bibliography:Application Number: KR20130067933