DIELECTRIC CERAMIC COMPOSITION AND ELECTRONIC DEVICE
The objective of the present invention is to provide a dielectric ceramic composition showing a high alternating current breakdown voltage as maintaining several characteristics good and is for the dielectric ceramic composition to provide an electronic component applied in a dielectric layer. In or...
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Main Authors | , , , , , , , |
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Format | Patent |
Language | English Korean |
Published |
24.12.2013
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Subjects | |
Online Access | Get full text |
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Summary: | The objective of the present invention is to provide a dielectric ceramic composition showing a high alternating current breakdown voltage as maintaining several characteristics good and is for the dielectric ceramic composition to provide an electronic component applied in a dielectric layer. In order to achieve the objective of the present invention, the dielectric ceramic composition contains a compound expressed as a composition equation Ba_x(Ti_1-ySn_y)O_3 and an oxide of Zn, in which x is 0.970-0.996 and y is 0.050-0.130. The amount of contained oxide of Zn is 1.5-8.0 wt% by ZnO conversion as to compound 100 wt%. It is desirable that the dielectric ceramic composition contains an oxide of Nb additionally, and the amount of contained oxide of Nb is equal to or less than 0.6 wt% by Nb_2O_5 conversion as to compound 100wt%.
(과제) 여러 가지 특성을 양호하게 유지하면서, 높은 교류 파괴 전압을 나타내는 유전체 자기 조성물을 제공하는 것 및 그 유전체 자기 조성물이 유전체층에 적용된 전자 부품을 제공하는 것. (해결 수단) 조성식 Ba(TiSn)O으로 나타내는 화합물과, Zn의 산화물을 함유하는 유전체 자기 조성물이다. 조성식 중의 x는 0.970∼0.996이고, y는 0.050∼0.130이다. Zn의 산화물 함유량이 화합물 100중량부에 대해서 ZnO 환산으로 1.5∼8.0중량부이다. 그 유전체 자기 조성물은 추가로 Nb의 산화물을 함유하고, Nb의 산화물 함유량이 화합물 100중량부에 대해서 NbO환산으로 0.6중량부 이하인 것이 바람직하다. |
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Bibliography: | Application Number: KR20130067933 |