METHOD FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM

The present invention provides a method for forming silicon-containing resist underlayer film capable of reducing coating defect by cleansing precipitate from a Si-containing resist lower layer material in a coating formation device. The present invention, in the method for forming silicon-containin...

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Bibliographic Details
Main Authors IWABUCHI MOTOAKI, YOSHIHARA TAKAO, OGIHARA TSUTOMU
Format Patent
LanguageEnglish
Korean
Published 23.12.2013
Subjects
APPARATUS SPECIALLY ADAPTED THEREFOR
BASIC ELECTRIC ELEMENTS
CINEMATOGRAPHY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
SEMICONDUCTOR DEVICES
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Summary:The present invention provides a method for forming silicon-containing resist underlayer film capable of reducing coating defect by cleansing precipitate from a Si-containing resist lower layer material in a coating formation device. The present invention, in the method for forming silicon-containing resist underlayer film, after the pipe of the coating formation device is cleaned by using alkali solution, the a Si-containing resist lower layer material is supplied through the pipe. Therefore, a layer is formed by coating the Si-containing resist lower layer material on a substrate.
Bibliography:Application Number: KR20130066465