HOMO-JUNCTION DIODE STRUCTURES USING FIN FIELD EFFECT TRANSISTOR PROCESSING

• Main Authors: HORNG JAW JUINN, HU CHIA HSIN, CHEN CHUNG HUI, CHANG SUN JAY
• Format: Patent
• Language: English; Korean
• Published: 20.12.2013
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

Diodes and bipolar junction transistors are formed in IC devices which include FinFETs by using various steps in a fin field effect transistor forming process. The diodes or BJTs include a separated fin area and a fin array area with n-wells with different depths and a p-well in a part of the fin array area which surrounds the n-wells in the separated fin area. The n-wells and the p-well for the diodes or BJTs are injected with the n-wells and the p-wells for the FinFETs. [Reference numerals] (301) Providing a semiconductor substrate;(303) Forming a hard mask layer having a fin pattern including a separated fin are, a fin array are, and a FinFET area;(305) Etching a plurality of fins into the substrate using the fin pattern;(307) Depositing dielectric materials on the substrate for filling spaces between the fins;(309) Flattening;(311) Partially removing the dielectric materials from the top of the fin array area;(312) Removing the hard mask layer;(313) Forming a deep n-well;(314) Forming a p-well by injecting a p-type dopant into a part of the fin array area and forming an n-well by injection the p-type dopant into a part of the FinFET area;(315) Forming n-wells by injecting an n-type dopant into a part of the fin array area surrounding the separated fin area and the p-well and forming the n-well by injecting the n-type dopant into a part of the FinFET area;(317) Annealing the substrate;(319) Epitaxial-growing silicon germanium or silicon carbide on each fin;(321) Forming a negative or positive contact;(323) Forming a base contact, a collector contact, and an emitter contact