LAYER-LAYER ETCH OF NON VOLATILE MATERIALS USING PLASMA

Provided is a method for etching a metal layer, which includes a plurality of cycles. At each cycle, etching gas which includes PF3, CO, and NO, or COF2 flows in a processing chamber. At each cycle, the etching gas is formed with plasma. At each cycle, the flow of the etching gas is stopped. [Refere...

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Bibliographic Details
Main Author GUHA JOYDEEP
Format Patent
LanguageEnglish
Korean
Published 11.12.2013
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
PHYSICS
SEMICONDUCTOR DEVICES
STATIC STORES
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Summary:Provided is a method for etching a metal layer, which includes a plurality of cycles. At each cycle, etching gas which includes PF3, CO, and NO, or COF2 flows in a processing chamber. At each cycle, the etching gas is formed with plasma. At each cycle, the flow of the etching gas is stopped. [Reference numerals] (104) Place a metal layer on a chamber;(108) Etching phase;(112) Cleaning phase;(116) Is the etching depth identical to a target ?;(120) Remove the metal layer from the chamber;(AA) START;(BB) NO;(CC) YES;(DD) Stop
Bibliography:Application Number: KR20130061712