THREE DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE METHOD FOR MANUFACTURING THE SAME

Provided are a 3D semiconductor memory device and a manufacturing method thereof. The 3D semiconductor memory device includes: an electrode structure which is formed by alternatively laminating insulation patterns and conductive patterns on a substrate; a semiconductor pattern which is connected to...

Full description

Saved in:
Bibliographic Details
Main Authors HWANG, KI HYUN, SON, YOUNG SEON, NAM, PHIL OUK, LEE, KWANG YOUNG, YANG, JUN KYU
Format Patent
LanguageEnglish
Korean
Published 02.12.2013
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:Provided are a 3D semiconductor memory device and a manufacturing method thereof. The 3D semiconductor memory device includes: an electrode structure which is formed by alternatively laminating insulation patterns and conductive patterns on a substrate; a semiconductor pattern which is connected to the substrate via the electrode structure; and an electrode separating pattern which passes through the electrode structure and is separated from the semiconductor pattern. The lower side of the electrode separating pattern has a rounded profile.
Bibliography:Application Number: KR20120054325