MAGNETIC MEMORY DEVICE HAVING MAGNETIC MEMORY CELLS AND MEMORY SYSTEM INCLUDING THE SAME

• Main Authors: OH, HYUNG ROCK, KIM, CHAN KYUNG, LEE, YUN SANG, SOHN, DONG HYUN, PARK, CHUL WOO, KANG, SANG BEOM, KANG, DONG SEOK
• Format: Patent
• Language: English; Korean
• Published: 27.11.2013
• Subjects: INFORMATION STORAGE; PHYSICS; STATIC STORES

The present invention provides a semiconductor memory device having a plurality of STT-MRAM cells. The semiconductor memory device according to one embodiment of the present invention comprises: a cell array which includes at least one bank group, wherein each bank group includes a plurality of banks, wherein each bank includes a plurality of STT-MRAM cells; a source voltage generator which supplies voltage to source lines connected to the STT-MRAM cell; and a command decoder which decodes commands from the outside so as to perform read and write operations in the STT-MRAM cell, wherein the STT-MRAM cell includes an MTJ device having a free layer, a tunnel layer, and a pinned layer sequentially laminated, and a cell transistor, wherein a gate of the cell transistor is connected to a word line, wherein one electrode of the cell transistor is connected to a bit line through the MTJ device, wherein the other electrode of the cell transistor is connected to the source line.