METHOD OF MANUFACTURING NITRIDE-GALLIUM-BASED SEMICONDUCTOR LIGHT EMITTING DEVICE

• Main Authors: SONG, SANG YEOB, KIM, HYUN YOUNG, YEO, IN JOON
• Format: Patent
• Language: English; Korean
• Published: 22.11.2013
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The present invention relates to a nitride-gallium based semiconductor light emitting device and comprises; a step which forms a light emitting structure including an an-type semiconductor layer, an active layer, and a p-type semiconductor layer made of a nitride semiconductor having Ga on a substrate; a step which forms a metal film on the p-type semiconductor layer and forms a Ga-metal compound by performing a thermal process; a step which removes the Ga-metal compound formed on the p-type semiconductor layer; a step which forms an electrode on the upper side of the p-type semiconductor layer in which the Ga-metal compound is removed. The feature of the present invention is to form gallium vacancy on the surface of the -type semiconductor layer by the response of the metal film and gallium of the p-type semiconductor layer in the step which forms the Ga-metal compound.