GRANULAR POLYCRYSTALLINE SILICON AND PRODUCTION THEREOF

• Main Authors: WEIDHAUS DIETER, HAUSWIRTH RAINER, HERTLEIN HARALD
• Format: Patent
• Language: English; Korean
• Published: 15.11.2013
• Subjects: CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOIDCHEMISTRY; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; COMPOUNDS THEREOF; DIFFUSION TREATMENT OF METALLIC MATERIAL; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OFSOLID INORGANIC COMPOUNDS; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; INORGANIC CHEMISTRY; MANUFACTURE OR TREATMENT THEREOF; METALLURGY; NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS,MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES ASDISCRETE UNITS; NANOTECHNOLOGY; NON-METALLIC ELEMENTS; PERFORMING OPERATIONS; PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION; TECHNICAL SUBJECTS COVERED BY FORMER USPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS; THEIR RELEVANT APPARATUS; TRANSPORTING

The present invention relates to granular polycrystalline silicon including an elaborate matrix including an radial crystallization aggregate with grains of 001-200 micrometers. The present invention relates to a method for manufacturing granular polycrystalline silicon. The method includes a step of manufacturing granular silicone in a fluid phase reactor from a gaseous mixture which includes TCS and hydrogen at a fluid phase temperature of 900-970 deg.C and in which TCS content is 20-29 mole %, a step of dividing the granular silicone obtained from a screen system including at least one screen deck into at least two screen fractions and forming seed particles having a size of 100-1500 micrometers and a mass standard intermediate value of 400-900 micrometers range by pulverizing a smallest screen fraction in a crushing system, a step of supplying the seed particles to the fluid phase reactor (1), a step of supplying additional screen the fraction to the fluid phase reactor (4), and a step of surface-processing with a gaseous mixture which includes TCS and hydrogen at a fluid phase temperature of 870-990 deg. C and in which TCS content is 1-10 mole % or less. 본 발명은 결정 크기가 0.001∼200 ㎛인 침상형의 방사형 결정 응집체를 포함하는 치밀한 매트릭스를 포함하는 과립형 다결정 실리콘에 관한 것이다. 본 발명은 유동상 온도 900∼970℃에서 TCS 및 수소를 포함하고 TCS 함량이 20∼29 몰%인 기체 혼합물로부터 유동상 반응기에서 과립형 실리콘을 제조하는 단계, 하나 이상의 스크린 덱을 포함하는 스크린 시스템에서 얻은 과립형 실리콘을 적어도 2개 또는 2개보다 많은 스크린 분획으로 나누고, 분쇄 시스템에서 가장 작은 스크린 분획을 분쇄하여 100∼1500 ㎛의 크기 및 400∼900 ㎛ 범위의 질량 기준 중간값을 갖는 시드 입자를 형성하는 단계, 상기 시드 입자를 유동상 반응기(1)에 공급하는 단계, 및 추가 스크린 분획을 유동상 반응기(4)에 공급하는 단계, 및 유동상 온도 870∼990℃에서 TCS 및 수소를 포함하고 TCS 함량이 5.1 내지 10 몰% 미만인 기체 혼합물로 표면처리하는 단계를 포함하는, 과립형 다결정 실리콘의 제조 방법에 관한 것이다.