METHOD FOR MANUFACTURING THIN FILM TRANSISTOR DEVICE, THIN FILM TRANSISTOR DEVICE AND DISPLAY DEVICE

A thin-film transistor device manufacturing method of forming a crystalline silicon film of stable crystallinity using a laser of a wavelength in a visible region is provided. The thin-film transistor device manufacturing method forms a plurality of gate electrodes above a substrate. A gate insulati...

Full description

Saved in:
Bibliographic Details
Main Author SUGAWARA YUTA
Format Patent
LanguageEnglish
Korean
Published 07.11.2013
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:A thin-film transistor device manufacturing method of forming a crystalline silicon film of stable crystallinity using a laser of a wavelength in a visible region is provided. The thin-film transistor device manufacturing method forms a plurality of gate electrodes above a substrate. A gate insulation layer is formed on the plurality of gate electrodes. An amorphous silicon layer is formed on the gate insulation layer. The amorphous silicon layer is crystallized using predetermined laser light to produce a crystalline silicon layer. A source electrode and a drain electrode are formed on the crystalline silicon layer in a region that corresponds to each of the plurality of gate electrodes. A film thickness of the gate insulation layer and a film thickness of the amorphous silicon layer satisfy predetermined conditional expressions.
Bibliography:Application Number: KR20117024413