THIN FILM TRANSISTOR, DISPLAY DEVICE HAVING THE SAME, AND MANUFACTURING METHOD OF THE SAME
PURPOSE: A thin film transistor, a display device having the same, and a method for manufacturing the same are provided to reduce the negative shift phenomenon of a threshold voltage by preventing a light negative bias thermal stress (LNBTS). CONSTITUTION: A gate electrode (GE) is formed on a base s...
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Main Authors | , , , , , , , , |
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Format | Patent |
Language | English Korean |
Published |
24.10.2013
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Subjects | |
Online Access | Get full text |
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Summary: | PURPOSE: A thin film transistor, a display device having the same, and a method for manufacturing the same are provided to reduce the negative shift phenomenon of a threshold voltage by preventing a light negative bias thermal stress (LNBTS). CONSTITUTION: A gate electrode (GE) is formed on a base substrate. A first insulating layer is formed on the gate electrode. A semiconductor layer (SM) is formed on the first insulating layer. A source electrode (SE) is formed on the semiconductor layer. A drain electrode (DE) is formed on the first insulating layer. |
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Bibliography: | Application Number: KR20120039237 |