THIN FILM TRANSISTOR, DISPLAY DEVICE HAVING THE SAME, AND MANUFACTURING METHOD OF THE SAME

PURPOSE: A thin film transistor, a display device having the same, and a method for manufacturing the same are provided to reduce the negative shift phenomenon of a threshold voltage by preventing a light negative bias thermal stress (LNBTS). CONSTITUTION: A gate electrode (GE) is formed on a base s...

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Bibliographic Details
Main Authors KIM, GUN HEE, LIM, JI HUN, KIM, DAE HWAN, LEE, JE HUN, JUNG, HYUN KWANG, KIM, JAE HYEONG, PARK, JUN HYUN, AHN, BYUNG DU, PARK, JAE WOO
Format Patent
LanguageEnglish
Korean
Published 24.10.2013
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PURPOSE: A thin film transistor, a display device having the same, and a method for manufacturing the same are provided to reduce the negative shift phenomenon of a threshold voltage by preventing a light negative bias thermal stress (LNBTS). CONSTITUTION: A gate electrode (GE) is formed on a base substrate. A first insulating layer is formed on the gate electrode. A semiconductor layer (SM) is formed on the first insulating layer. A source electrode (SE) is formed on the semiconductor layer. A drain electrode (DE) is formed on the first insulating layer.
Bibliography:Application Number: KR20120039237