SEMICONDUCTOR DEVICE AND MANUFACTURING THE SAME

PURPOSE: A semiconductor device and a manufacturing method thereof are provided to improve electrical characteristics by forming a channel region including a polysilicon layer. CONSTITUTION: A channel region (120) is extended on a substrate in the vertical direction. The channel region includes a se...

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Bibliographic Details
Main Authors KIM, BI O, HWANG, KI HYUN, SUN, CHANG WOO, AHN, JAE YOUNG, NOH, JIN TAE, LIM, SEUNG HYUN
Format Patent
LanguageEnglish
Korean
Published 23.10.2013
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PURPOSE: A semiconductor device and a manufacturing method thereof are provided to improve electrical characteristics by forming a channel region including a polysilicon layer. CONSTITUTION: A channel region (120) is extended on a substrate in the vertical direction. The channel region includes a semiconductor layer. The semiconductor layer includes nitrogen. Gate electrodes (150) are separated from each other on the sidewall of the channel region in the vertical direction. A gate dielectric layer (140) is formed in the channel region and between the gate electrodes.
Bibliography:Application Number: KR20120038710