THIN FILM TRANSISTOR, THIN FILM TRANSISTOR ARRAY PANEL INCLUDING THE SAME AND MANUFACTURING METHOD THEREOF

PURPOSE: A thin film transistor, a thin film transistor array panel including the same, and a manufacturing method thereof are provided to improve the property of a switching element by reducing parasitic capacitance. CONSTITUTION: A source electrode and a drain electrode are connected to an oxide s...

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Main Authors KIM, DONG JO, CHANG, CHONG SUP, NA, HYUN JAE, PARK, SANG HO, KHANG, YOON HO, LEE, YONG SU, YU, SE HWAN
Format Patent
LanguageEnglish
Korean
Published 11.10.2013
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PURPOSE: A thin film transistor, a thin film transistor array panel including the same, and a manufacturing method thereof are provided to improve the property of a switching element by reducing parasitic capacitance. CONSTITUTION: A source electrode and a drain electrode are connected to an oxide semiconductor (134). The oxide semiconductor is formed between the source electrode and the drain electrode. An insulating layer (142) is positioned on the oxide semiconductor. A gate electrode (154) is positioned on the insulating layer. The edge boundary of the gate electrode and the oxide semiconductor is practically arranged.
Bibliography:Application Number: KR20120034099