III-NITRIDE LIGHT EMITTING DEVICE
A device includes a substrate (10) and a III-nitride structure (15) grown on the substrate, the III-nitride structure comprising a light emitting layer (16) disposed between an n-type region (14) and a p-type region (18). The substrate is a RA03 (MO)n where R is one of a trivalent cation: Sc, In, Y...
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Main Authors | , , , , , |
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Format | Patent |
Language | English Korean |
Published |
10.10.2013
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Subjects | |
Online Access | Get full text |
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Summary: | A device includes a substrate (10) and a III-nitride structure (15) grown on the substrate, the III-nitride structure comprising a light emitting layer (16) disposed between an n-type region (14) and a p-type region (18). The substrate is a RA03 (MO)n where R is one of a trivalent cation: Sc, In, Y and a lanthanide; A is one of a trivalent cation: Fe (III), Ga and Al; M is one for a divalent cation: Mg, Mn, Fe (II), Co, Cu, Zn and Cd; and n is an integer≥1. The substrate has an inplane lattice constant asubstrate. At lease one III-nitride layer in the III-nitride structure has a bulk lattice constant alayer such that [(|asubstrate−alayer|)/asubstrate]*100% is no more than 1%. |
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Bibliography: | Application Number: KR20137014094 |