III-NITRIDE LIGHT EMITTING DEVICE

A device includes a substrate (10) and a III-nitride structure (15) grown on the substrate, the III-nitride structure comprising a light emitting layer (16) disposed between an n-type region (14) and a p-type region (18). The substrate is a RA03 (MO)n where R is one of a trivalent cation: Sc, In, Y...

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Main Authors EPLER JOHN EDWARD, GARDNER NATHAN FREDRICK, GOETZ WERNER KARL, LEON FRANCISCO ALEXANDER, MCLAURIN MELVIN BARKER, GRUNDMANN MICHAEL JASON
Format Patent
LanguageEnglish
Korean
Published 10.10.2013
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A device includes a substrate (10) and a III-nitride structure (15) grown on the substrate, the III-nitride structure comprising a light emitting layer (16) disposed between an n-type region (14) and a p-type region (18). The substrate is a RA03 (MO)n where R is one of a trivalent cation: Sc, In, Y and a lanthanide; A is one of a trivalent cation: Fe (III), Ga and Al; M is one for a divalent cation: Mg, Mn, Fe (II), Co, Cu, Zn and Cd; and n is an integer≥1. The substrate has an inplane lattice constant asubstrate. At lease one III-nitride layer in the III-nitride structure has a bulk lattice constant alayer such that [(|asubstrate−alayer|)/asubstrate]*100% is no more than 1%.
Bibliography:Application Number: KR20137014094