METHOD OF PATTERNING TITANIUM OXIDE LAYER

PURPOSE: A patterning method of a titanium oxide film is provided to form a nanoporous structure in a selective area on titanium oxide film surface. CONSTITUTION: A patterning method of a titanium oxide film comprises the following steps: (S10) forming a titanium oxide film on a substrate; (S20) for...

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Bibliographic Details
Main Author LEE, BONG JOON
Format Patent
LanguageEnglish
Korean
Published 10.10.2013
Subjects
ALLOYS
APPARATUS OR METHODS FOR ORAL OR DENTAL HYGIENE
APPARATUS SPECIALLY ADAPTED THEREFOR
CHEMISTRY
CINEMATOGRAPHY
DENTISTRY
ELECTROGRAPHY
FERROUS OR NON-FERROUS ALLOYS
HOLOGRAPHY
HUMAN NECESSITIES
HYGIENE
MATERIALS THEREFOR
MEDICAL OR VETERINARY SCIENCE
METALLURGY
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
TREATMENT OF ALLOYS OR NON-FERROUS METALS
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Summary:PURPOSE: A patterning method of a titanium oxide film is provided to form a nanoporous structure in a selective area on titanium oxide film surface. CONSTITUTION: A patterning method of a titanium oxide film comprises the following steps: (S10) forming a titanium oxide film on a substrate; (S20) forming photoresist patterns on the titanium oxide film and selectively exposing surface of the titanium oxide film; (S30) selectively forming a nanoporous structure on selectively exposed surface of the titanium oxide film; and (S40) removing the photoresist patterns. [Reference numerals] (S10) Forming a titanium oxide film on a substrate; (S20) Forming photoresist patterns on the titanium oxide film and selectively exposing surface of the titanium oxide film; (S30) Selectively forming a nanoporous structure on selectively exposed surface of the titanium oxide film; (S40) Removing the photoresist patterns
Bibliography:Application Number: KR20120033400