METHOD FOR FORMING FINE PATTERNS OF SEMICONDUCTOR DEVICE

PURPOSE: A method of forming fine patterns of a semiconductor device forms highly integrated semiconductor devices by forming fine patterns arranged in a zigzag using line and space patterns. CONSTITUTION: A first hard mask pattern (41) extended in a first direction is formed on a lower film (20). A...

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Main Authors PARK, JOON SOO, KIM, JOON, YOON, KUK HAN, KIM, CHEOL HONG, NAM, SEOK WOO
Format Patent
LanguageEnglish
Korean
Published 08.10.2013
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PURPOSE: A method of forming fine patterns of a semiconductor device forms highly integrated semiconductor devices by forming fine patterns arranged in a zigzag using line and space patterns. CONSTITUTION: A first hard mask pattern (41) extended in a first direction is formed on a lower film (20). A second hard mask pattern (61) filled in gaps between the first hard mask patterns is formed. A first mask pattern extended in a second direction perpendicular to the first direction is formed on the first and second hard mask patterns. First openings are formed by etching the first hard mask patterns. A second mask pattern (70) is filled in the first openings and is extended in the second direction. Second openings arranged in the oblique direction from the first openings are formed by etching the second hard mask patterns.
Bibliography:Application Number: KR20120031872