LASER ANNEALING METHOD, LASER ANNEALING APPARATUS, AND METHOD FOR MANUFACTURING THIN FILM TRANSISTOR

PURPOSE: A laser annealing method, a laser annealing apparatus, and a method for manufacturing a thin film transistor are provided to detect particles which do not have a desired diameter by inspecting the distribution of the intensity of a laser beam. CONSTITUTION: A laser device includes a resonat...

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Bibliographic Details
Main Authors TOGAWA RYUICHI, KAKUNO TSUTOMU, ITO HIROSHI
Format Patent
LanguageEnglish
Korean
Published 25.09.2013
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PURPOSE: A laser annealing method, a laser annealing apparatus, and a method for manufacturing a thin film transistor are provided to detect particles which do not have a desired diameter by inspecting the distribution of the intensity of a laser beam. CONSTITUTION: A laser device includes a resonator. A line beam optical system (130) irradiates a laser beam (115). An amorphous silicon layer (211) is formed on the surface of a substrate (220). The substrate is irradiated with the laser beam. The substrate is mounted on a mounting stage.
Bibliography:Application Number: KR20130027478