MICROELECTRONIC STRUCTURES INCLUDING CUPROUS OXIDE SEMICONDUCTORS AND HAVING IMPROVED P-N HETEROJUNCTIONS

The present invention provides strategies for making higher quality p-n heterojunctions that incorporate cuprous oxide and another material suitable for forming the heterojunction. When incorporated into microelectronic devices, these improved heterojunctions would be expected to provide improved mi...

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Bibliographic Details
Main Authors DARVISH DAVIS S, ATWATER HARRY A
Format Patent
LanguageEnglish
Korean
Published 12.09.2013
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The present invention provides strategies for making higher quality p-n heterojunctions that incorporate cuprous oxide and another material suitable for forming the heterojunction. When incorporated into microelectronic devices, these improved heterojunctions would be expected to provide improved microelectronic properties such as improved defect density, in particular lower interfacial defect density at the p-n heterojunction, leading to improved microelectronic devices such as solar cell devices with improved open circuit voltage, fill factor, efficiency, current density, and the like.
Bibliography:Application Number: KR20137010919