GALLIUM NITRIDE DEVICE SUBSTRATE CONTAINING A LATTICE PARAMETER ALTERING ELEMENT

PURPOSE: A gallium nitride device substrate containing lattice parameter altering element is provided to improve optical quality by growing an epitaxial growth layer as thick as possible. CONSTITUTION: A buffer layer (104) of gallium nitride is formed on a sacrificial substrate (102). The buffer lay...

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Main Authors ROBBINS VIRGINIA M, LESTER STEVEN D, CORZINE SCOTT W
Format Patent
LanguageEnglish
Korean
Published 28.08.2013
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Abstract PURPOSE: A gallium nitride device substrate containing lattice parameter altering element is provided to improve optical quality by growing an epitaxial growth layer as thick as possible. CONSTITUTION: A buffer layer (104) of gallium nitride is formed on a sacrificial substrate (102). The buffer layer is grown in a relatively low temperature. The buffer layer is formed with aluminum nitride. A gallium nitride interlayer (106) is grown on the buffer layer. A dielectric material is selectively patterned on the surface of the interlayer.
AbstractList PURPOSE: A gallium nitride device substrate containing lattice parameter altering element is provided to improve optical quality by growing an epitaxial growth layer as thick as possible. CONSTITUTION: A buffer layer (104) of gallium nitride is formed on a sacrificial substrate (102). The buffer layer is grown in a relatively low temperature. The buffer layer is formed with aluminum nitride. A gallium nitride interlayer (106) is grown on the buffer layer. A dielectric material is selectively patterned on the surface of the interlayer.
Author CORZINE SCOTT W
ROBBINS VIRGINIA M
LESTER STEVEN D
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SubjectTerms BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Title GALLIUM NITRIDE DEVICE SUBSTRATE CONTAINING A LATTICE PARAMETER ALTERING ELEMENT
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