GALLIUM NITRIDE DEVICE SUBSTRATE CONTAINING A LATTICE PARAMETER ALTERING ELEMENT
PURPOSE: A gallium nitride device substrate containing lattice parameter altering element is provided to improve optical quality by growing an epitaxial growth layer as thick as possible. CONSTITUTION: A buffer layer (104) of gallium nitride is formed on a sacrificial substrate (102). The buffer lay...
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Main Authors | , , |
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Format | Patent |
Language | English Korean |
Published |
28.08.2013
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Subjects | |
Online Access | Get full text |
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Summary: | PURPOSE: A gallium nitride device substrate containing lattice parameter altering element is provided to improve optical quality by growing an epitaxial growth layer as thick as possible. CONSTITUTION: A buffer layer (104) of gallium nitride is formed on a sacrificial substrate (102). The buffer layer is grown in a relatively low temperature. The buffer layer is formed with aluminum nitride. A gallium nitride interlayer (106) is grown on the buffer layer. A dielectric material is selectively patterned on the surface of the interlayer. |
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Bibliography: | Application Number: KR20130061046 |