MULTIPLE ZONE TEMPERATURE CONTROL FOR CMP

PURPOSE: A multiple zone temperature control method for CMP is provided to implement uniform planarization by independently changing a temperature on each surface of wafers to control a polishing speed. CONSTITUTION: A CMP station (102) includes a polishing head (104) to maintain a wafer (106). The...

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Main Authors LIN CHIN HSIANG, LEE BO I, YANG CHI MING, HUANG SOON KANG, WU JIANN LIH, PENG CHIH I
Format Patent
LanguageEnglish
Korean
Published 22.08.2013
Subjects
BASIC ELECTRIC ELEMENTS
DRESSING OR CONDITIONING OF ABRADING SURFACES
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
GRINDING
MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING
PERFORMING OPERATIONS
POLISHING
SEMICONDUCTOR DEVICES
TRANSPORTING
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Summary:PURPOSE: A multiple zone temperature control method for CMP is provided to implement uniform planarization by independently changing a temperature on each surface of wafers to control a polishing speed. CONSTITUTION: A CMP station (102) includes a polishing head (104) to maintain a wafer (106). The wafer includes a plurality of polishing target surface areas. A plurality of concentric temperature control devices are adjacent to the polishing target surface areas. A wafer surface flatness sensor (114) measures the flatness of each polishing target surface area. A feedback path (116) couples the wafer surface flatness sensor with the temperature control devices. [Reference numerals] (102) CMP station; (106) Wafer; (108) Temperature control device; (114) Wafer surface flatness sensor; (117) Controller; (118) Memory; (120) Operation routine; (122) Real-time surface profile analysis; (124) Multiple zone temperature control
Bibliography:Application Number: KR20120067939