NITRIDE COMPOUND BASED LIGHT-EMITTING DIODE AND METHOF FOR MANUFACTURING THEREOF

PURPOSE: A nitride based light emitting diode and a manufacturing method thereof are provided to implement a light emitting device of high efficiency by forming an optical waveguide structure on an n-type bottom contact layer. CONSTITUTION: A GaN layer (200) is formed on a substrate. An n-type botto...

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Bibliographic Details
Main Authors KANG, YOUNG JIN, KIM, JA YEON, CHOI, YOO MIN, CHOI, PAN JU, KWON, MIN KI, BAE, HO JUNE
Format Patent
LanguageEnglish
Korean
Published 16.08.2013
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PURPOSE: A nitride based light emitting diode and a manufacturing method thereof are provided to implement a light emitting device of high efficiency by forming an optical waveguide structure on an n-type bottom contact layer. CONSTITUTION: A GaN layer (200) is formed on a substrate. An n-type bottom contact layer (300) is formed on the upper side of the GaN layer. The n-type bottom contact layer includes an optical waveguide structure. An active layer is formed on the upper side of the n-type bottom contact layer. A p-type top contact layer (700) is formed on the upper side of the active layer.
Bibliography:Application Number: KR20120012381