FINFET AND METHOD OF FABRICATING THE SAME

• Main Authors: YANG SHYH HORNG, CHEN HOU YU, CHAO DONALD Y
• Format: Patent
• Language: English; Korean
• Published: 09.08.2013
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PURPOSE: A FinFET and a manufacturing method thereof are provided to form source and drain areas with low contact resistance by forming silicide on the lower side of an epitaxial layer. CONSTITUTION: A substrate including a main surface is provided (102). A first fin and a second fin which are extended from the main surface of the substrate with a first height are formed (104). An insulation layer which is extended from the main surface of the substrate with a second height is formed (106). Each fin is covered with an epitaxial layer (108). The substrate is annealed to cover each fin with a round and flat epitaxial layer between adjacent fins (110). A metal material is formed on the round and flat epitaxial layer (112). The substrate is annealed to change the round and flat epitaxial layer into silicide (114). [Reference numerals] (102) Substrate including a main surface is provided; (104) First fin and a second fin which are extended from the main surface of a substrate with a first height are formed; (106) Insulation layer extended from the main surface of a substrate with a second height is formed and a part of fins are extended via the upper side of the insulation layer; (108) Each fin is covered by selectively growing an epitaxial layer; (110) Substrate is annealed to cover each fin with a round and flat epitaxial layer between adjacent fins; (112) Metal material is formed on a round and flat epitaxial layer; (114) Substrate is annealed to change the round and flat epitaxial layer into silicide