DECOUPLING FINFET CAPACITORS

• Main Author: CHEN CHUNG HUI
• Format: Patent
• Language: English; Korean
• Published: 08.08.2013
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PURPOSE: A decoupling FINFET capacitor is provided to obtain higher capacitance density compared to an MOM capacitor in the same size. CONSTITUTION: A silicon substrate is provided (402). An oxide layer is formed between si pins (404). A first electric conductor is formed between the si pins (406). An insulating layer is formed between the first electric conductor and the si pins (408). A second electric conductor is deposited on the first electric conductor (410). A second insulation layer is deposited on the second electric conductor (412). A third electric conductor is deposited on the second electric conductor (414). [Reference numerals] (402) Silicon substrate is provided; (404) Silicon pins on the silicon substrate and an oxide layer between the silicon pins are formed; (406) First electric conductor is formed between several silicon pins among a plurality of silicon pins on the oxide layer; (408) Insulating layer is formed between the first electric conductor and the silicon pins; (410) Second electric conductor is deposited on the first electric conductor; (412) Another insulating layer is deposited on the second electric conductor; (414) Third electric conductor is deposited on the second electric conductor