IMPLEMENTING ENHANCED DATA READ FOR MULTI-LEVEL CELL (MLC) MEMORY USING THRESHOLD VOLTAGE-DRIFT OR RESISTANCE DRIFT TOLERANT MOVING BASELINE MEMORY DATA ENCODING

• Main Authors: MATEESCU ROBERT EUGENIU, FRANCA NETO LUIZ M, BANDIC ZVONIMIR Z, GUYOT CYRIL
• Format: Patent
• Language: English; Korean
• Published: 07.08.2013
• Subjects: INFORMATION STORAGE; PHYSICS; STATIC STORES

PURPOSE: Enhanced data read implement of an MLC memory using threshold voltage drift or resistance drift tolerant moving baseline memory data encoding is provided to improve data write, data read, and data partial-erase performance by minimizing a change in a charge amount of a floating gate. CONSTITUTION: A device for implementing data read for an MLC memory includes a controller (106). The controller performs a data read back for data written in the MLC memory by using threshold voltage drift or resistance drift tolerant moving baseline memory data encoding. The controller compares higher voltage and lower voltage levels. The controller identifies respective data values in response to the compared high voltage and lower voltage levels. [Reference numerals] (102) Solid state drive; (104) Host computer; (106) Controller CPU; (108) Main memory (DRAM); (110) MLC memory management information and control block; (112) Moving baseline memory data encoding control block; (114) MLC memory (flash chip, PCM chip); (116) Host interface