IMPLEMENTING ENHANCED DATA READ FOR MULTI-LEVEL CELL (MLC) MEMORY USING THRESHOLD VOLTAGE-DRIFT OR RESISTANCE DRIFT TOLERANT MOVING BASELINE MEMORY DATA ENCODING

PURPOSE: Enhanced data read implement of an MLC memory using threshold voltage drift or resistance drift tolerant moving baseline memory data encoding is provided to improve data write, data read, and data partial-erase performance by minimizing a change in a charge amount of a floating gate. CONSTI...

Full description

Saved in:
Bibliographic Details
Main Authors MATEESCU ROBERT EUGENIU, FRANCA NETO LUIZ M, BANDIC ZVONIMIR Z, GUYOT CYRIL
Format Patent
LanguageEnglish
Korean
Published 07.08.2013
Subjects
INFORMATION STORAGE
PHYSICS
STATIC STORES
Online AccessGet full text

Cover

More Information
Summary:PURPOSE: Enhanced data read implement of an MLC memory using threshold voltage drift or resistance drift tolerant moving baseline memory data encoding is provided to improve data write, data read, and data partial-erase performance by minimizing a change in a charge amount of a floating gate. CONSTITUTION: A device for implementing data read for an MLC memory includes a controller (106). The controller performs a data read back for data written in the MLC memory by using threshold voltage drift or resistance drift tolerant moving baseline memory data encoding. The controller compares higher voltage and lower voltage levels. The controller identifies respective data values in response to the compared high voltage and lower voltage levels. [Reference numerals] (102) Solid state drive; (104) Host computer; (106) Controller CPU; (108) Main memory (DRAM); (110) MLC memory management information and control block; (112) Moving baseline memory data encoding control block; (114) MLC memory (flash chip, PCM chip); (116) Host interface
Bibliography:Application Number: KR20130007448