RESISTIVE MEMORY DEVICE AND CALIBRATION METHOD THEREOF

PURPOSE: A resistivity memory device and a calibration method thereof are provided to control the source line voltage and the program voltage, thereby improving the program reliability of the resistivity memory device. CONSTITUTION: The calibration voltage is applied to a source line of a plurality...

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Bibliographic Details
Main Authors KIM, CHAN KYUNG, PARK, CHUL WOO, KANG, SANG BEOM, OH, HYUNG ROK
Format Patent
LanguageEnglish
Korean
Published 30.07.2013
Subjects
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Summary:PURPOSE: A resistivity memory device and a calibration method thereof are provided to control the source line voltage and the program voltage, thereby improving the program reliability of the resistivity memory device. CONSTITUTION: The calibration voltage is applied to a source line of a plurality of memory cell, and the plurality of memory cell is programmed in a target status. Depending on the program result, the calibration voltage is determined as the source line voltage (S150). The program voltage which programs the plurality of memory cell is determined (S190). The program of the plurality of memory cell is performed by the difference of the source line voltage and the program voltage. The program voltage is applied to a bit line of the plurality of memory cell.
Bibliography:Application Number: KR20120006488