OPTOELECTRONIC DEVICE USING PATTERNED SAPPHIRE SUBSTRATE HAVING A INNER REFLECTIVE LAYER AND MANUFACTURING METHOD THEROF

PURPOSE: A LED which has a gallium nitride layer capable of using a pattern sapphire substrate having an internal reflection film and a manufacturing method of the pattern sapphire substrate having the internal reflection film are provided to form the pattern sapphire substrate automatically by the...

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Bibliographic Details
Main Authors SEONG, TAE YEON, YUM, WOONG SUN, JEON, JOON WOO
Format Patent
LanguageEnglish
Korean
Published 29.07.2013
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PURPOSE: A LED which has a gallium nitride layer capable of using a pattern sapphire substrate having an internal reflection film and a manufacturing method of the pattern sapphire substrate having the internal reflection film are provided to form the pattern sapphire substrate automatically by the reflection film, thereby enhancing the processing efficiency. CONSTITUTION: A reflection film is laminated on a sapphire substrate. The laminated reflection film is etched. An aluminum layer is laminated on the etched reflection film. The aluminum is oxidized. [Reference numerals] (AA,CC,FF,II,JJ,KK) Sapphire; (BB,EE) Reflection film; (DD) Etching; (GG) Metalizing; (HH) Aluminium
Bibliography:Application Number: KR20120006324