METHOD OF FORMING THROUGH SILICON VIA USING LASER ABLATION

PURPOSE: A method of forming a through-silicon via by using laser ablation is provided to form a long groove firstly and form a through-hole by using a grinding process secondly, thereby simplifying a process of forming the through-silicon via. CONSTITUTION: A method of forming through-silicon vias...

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Bibliographic Details
Main Authors JI, WON SOO, KIM, CHOO HO, BANG, SANG KYU, CHO, SOO HYUN, KIM, EUI SEOK
Format Patent
LanguageEnglish
Korean
Published 23.07.2013
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PURPOSE: A method of forming a through-silicon via by using laser ablation is provided to form a long groove firstly and form a through-hole by using a grinding process secondly, thereby simplifying a process of forming the through-silicon via. CONSTITUTION: A method of forming through-silicon vias by using laser ablation comprises the steps of: preparing a silicon wafer (210); laser drilling to form a plurality of grooves (220) by irradiating a laser beam (L) onto a first surface (211) of the silicon wafer; and grinding a second surface (212) of the silicon wafer to form a plurality of through-silicon vias by exposing the grooves on the second surface of the silicon wafer. The step of laser drilling comprises using an ultrashort pulse laser (230). In the step of grinding, an upper surface of the silicon wafer is ground.
Bibliography:Application Number: KR20120004508