IO ESD DEVICE AND METHODS FOR FORMING THE SAME

PURPOSE: An IO ESD device and a forming method thereof are provided to reduce leakage currents from ESD diodes by separately forming p-type epitaxial regions from silicon germanium stressors of p-type FinFETs. CONSTITUTION: An n-type well region (32) is formed on a semiconductor substrate. A p-type...

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Bibliographic Details
Main Authors CHANG SHOU ZEN, LEE TUNG YING, CHANG CHIH HAO, GUO WEN HUEI
Format Patent
LanguageEnglish
Korean
Published 16.07.2013
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PURPOSE: An IO ESD device and a forming method thereof are provided to reduce leakage currents from ESD diodes by separately forming p-type epitaxial regions from silicon germanium stressors of p-type FinFETs. CONSTITUTION: An n-type well region (32) is formed on a semiconductor substrate. A p-type semiconductor region is formed on the n-type well region. The p-type semiconductor region and the n-type well region form a pn junction of an ESD diode. The p-type semiconductor region does not include germanium. The p-type semiconductor region is formed between two gate electrodes (122).
Bibliography:Application Number: KR20120026314