SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
PURPOSE: A semiconductor device and a method for manufacturing the same are provided to prevent a short by using a device isolation region formed by etching the spacer of an active region. CONSTITUTION: A device isolation region (220) is formed in a semiconductor substrate. A spacer (250) is formed...
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| Main Author | |
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| Format | Patent |
| Language | English Korean |
| Published |
10.07.2013
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| Subjects | |
| Online Access | Get full text |
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| Abstract | PURPOSE: A semiconductor device and a method for manufacturing the same are provided to prevent a short by using a device isolation region formed by etching the spacer of an active region. CONSTITUTION: A device isolation region (220) is formed in a semiconductor substrate. A spacer (250) is formed at a sidewall in a buried gate region. The spacer is etched by using an etch mask. A space pattern is formed in the buried gate region. A buried gate (240) is formed by burying a conducting material. |
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| AbstractList | PURPOSE: A semiconductor device and a method for manufacturing the same are provided to prevent a short by using a device isolation region formed by etching the spacer of an active region. CONSTITUTION: A device isolation region (220) is formed in a semiconductor substrate. A spacer (250) is formed at a sidewall in a buried gate region. The spacer is etched by using an etch mask. A space pattern is formed in the buried gate region. A buried gate (240) is formed by burying a conducting material. |
| Author | JUNG, TAE O |
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| Notes | Application Number: KR20110147019 |
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| PublicationYear | 2013 |
| RelatedCompanies | SK HYNIX INC |
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| Snippet | PURPOSE: A semiconductor device and a method for manufacturing the same are provided to prevent a short by using a device isolation region formed by etching... |
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| SubjectTerms | ELECTRICITY |
| Title | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME |
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