SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

PURPOSE: A semiconductor device and a method for manufacturing the same are provided to prevent a short by using a device isolation region formed by etching the spacer of an active region. CONSTITUTION: A device isolation region (220) is formed in a semiconductor substrate. A spacer (250) is formed...

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Bibliographic Details
Main Author JUNG, TAE O
Format Patent
LanguageEnglish
Korean
Published 10.07.2013
Subjects
ELECTRICITY
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Summary:PURPOSE: A semiconductor device and a method for manufacturing the same are provided to prevent a short by using a device isolation region formed by etching the spacer of an active region. CONSTITUTION: A device isolation region (220) is formed in a semiconductor substrate. A spacer (250) is formed at a sidewall in a buried gate region. The spacer is etched by using an etch mask. A space pattern is formed in the buried gate region. A buried gate (240) is formed by burying a conducting material.
Bibliography:Application Number: KR20110147019