METHOD FOR MANUFACTURING PHASE-CHANGE RANDOM ACCESS MEMORY DEVICE
PURPOSE: A method for manufacturing a phase change memory device is provided to prevent an oxidation phenomenon by improving a material functioning as a hard mask. CONSTITUTION: A word line region (220) is formed in a semiconductor substrate (210). A switching element material is deposited in the up...
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| Main Authors | , |
|---|---|
| Format | Patent |
| Language | English Korean |
| Published |
10.07.2013
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| Subjects | |
| Online Access | Get full text |
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| Abstract | PURPOSE: A method for manufacturing a phase change memory device is provided to prevent an oxidation phenomenon by improving a material functioning as a hard mask. CONSTITUTION: A word line region (220) is formed in a semiconductor substrate (210). A switching element material is deposited in the upper part of the word line region. A hard mask material is deposited in the upper part of the word line region. A hole (H) is formed by etching the hard mask material and the switching element material. An insulating material is formed in the sidewall of the hole. |
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| AbstractList | PURPOSE: A method for manufacturing a phase change memory device is provided to prevent an oxidation phenomenon by improving a material functioning as a hard mask. CONSTITUTION: A word line region (220) is formed in a semiconductor substrate (210). A switching element material is deposited in the upper part of the word line region. A hard mask material is deposited in the upper part of the word line region. A hole (H) is formed by etching the hard mask material and the switching element material. An insulating material is formed in the sidewall of the hole. |
| Author | BAEK, SEUNG BEOM LEE, HYUNG SUK |
| Author_xml | – fullname: BAEK, SEUNG BEOM – fullname: LEE, HYUNG SUK |
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| Notes | Application Number: KR20110146913 |
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| PublicationYear | 2013 |
| RelatedCompanies | SK HYNIX INC |
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| Snippet | PURPOSE: A method for manufacturing a phase change memory device is provided to prevent an oxidation phenomenon by improving a material functioning as a hard... |
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| SubjectTerms | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| Title | METHOD FOR MANUFACTURING PHASE-CHANGE RANDOM ACCESS MEMORY DEVICE |
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