METHOD FOR MANUFACTURING PHASE-CHANGE RANDOM ACCESS MEMORY DEVICE

PURPOSE: A method for manufacturing a phase change memory device is provided to prevent an oxidation phenomenon by improving a material functioning as a hard mask. CONSTITUTION: A word line region (220) is formed in a semiconductor substrate (210). A switching element material is deposited in the up...

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Bibliographic Details
Main Authors BAEK, SEUNG BEOM, LEE, HYUNG SUK
Format Patent
LanguageEnglish
Korean
Published 10.07.2013
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PURPOSE: A method for manufacturing a phase change memory device is provided to prevent an oxidation phenomenon by improving a material functioning as a hard mask. CONSTITUTION: A word line region (220) is formed in a semiconductor substrate (210). A switching element material is deposited in the upper part of the word line region. A hard mask material is deposited in the upper part of the word line region. A hole (H) is formed by etching the hard mask material and the switching element material. An insulating material is formed in the sidewall of the hole.
Bibliography:Application Number: KR20110146913