POWER SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THEREOF

PURPOSE: A power semiconductor device and a method for manufacturing the same are provided to increase the degree of integration of first and second electrodes by using a multilayer electrode pad for reducing the resistance between the first and second electrodes. CONSTITUTION: A second insulation l...

Full description

Saved in:
Bibliographic Details
Main Authors LEE, HEON BOK, KIM, KI SE
Format Patent
LanguageEnglish
Korean
Published 09.07.2013
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:PURPOSE: A power semiconductor device and a method for manufacturing the same are provided to increase the degree of integration of first and second electrodes by using a multilayer electrode pad for reducing the resistance between the first and second electrodes. CONSTITUTION: A second insulation layer (150) is divided to a third region and a fourth region. Third via electrodes are in contact with a first electrode pad. Fourth via electrodes are in contact with a second electrode pad. At least one third electrode pad is in contact with the third via electrodes. At least one fourth electrode pad (172) is in contact with the fourth via electrodes.
Bibliography:Application Number: KR20110146206