DEPOSITING TUNGSTEN INTO HIGH ASPECT RATIO FEATURES

• Main Authors: CHANDRASHEKAR ANAND, CHANG SEAN, HUMAYUN RAASHINA, FELLIS AARON R, DANEK MICHAL
• Format: Patent
• Language: English; Korean
• Published: 28.06.2013
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PURPOSE: A tungsten deposition into a high aspect ratio property unit is provided to lower the deposition ratio near a property unit opening rather than inside the property unit, thereby preventing an early closing of the property unit. CONSTITUTION: A tungsten-containing precursor and a reducing ag...