DEPOSITING TUNGSTEN INTO HIGH ASPECT RATIO FEATURES

PURPOSE: A tungsten deposition into a high aspect ratio property unit is provided to lower the deposition ratio near a property unit opening rather than inside the property unit, thereby preventing an early closing of the property unit. CONSTITUTION: A tungsten-containing precursor and a reducing ag...

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Bibliographic Details
Main Authors CHANDRASHEKAR ANAND, CHANG SEAN, HUMAYUN RAASHINA, FELLIS AARON R, DANEK MICHAL
Format Patent
LanguageEnglish
Korean
Published 28.06.2013
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PURPOSE: A tungsten deposition into a high aspect ratio property unit is provided to lower the deposition ratio near a property unit opening rather than inside the property unit, thereby preventing an early closing of the property unit. CONSTITUTION: A tungsten-containing precursor and a reducing agent are introduced to a process chamber. A layer of the tungsten-containing material is deposited on a semiconductor substrate which is partially manufactured(203). The layer of the tungsten-containing material partially charges the high aspect ratio property unit. An activated etchant material is introduced to the process chamber. By using the activated etchant material, a part of the deposited layer is selectively removed(205). [Reference numerals] (201) Station arrangement; (203) Tungsten containing matter; (205) Deposited layer is selectively raised; (207) Another cycle?; (209) Process variable change; (213) Specialty charging; (AA) Start; (BB) Yes; (CC) No; (DD) Stop
Bibliography:Application Number: KR20130054726