DEPOSITING TUNGSTEN INTO HIGH ASPECT RATIO FEATURES

• Main Authors: CHANDRASHEKAR ANAND, CHANG SEAN, HUMAYUN RAASHINA, FELLIS AARON R, DANEK MICHAL
• Format: Patent
• Language: English; Korean
• Published: 28.06.2013
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PURPOSE: A tungsten deposition into a high aspect ratio property unit is provided to lower the deposition ratio near a property unit opening rather than inside the property unit, thereby preventing an early closing of the property unit. CONSTITUTION: A tungsten-containing precursor and a reducing agent are introduced to a process chamber. A layer of the tungsten-containing material is deposited on a semiconductor substrate which is partially manufactured(203). The layer of the tungsten-containing material partially charges the high aspect ratio property unit. An activated etchant material is introduced to the process chamber. By using the activated etchant material, a part of the deposited layer is selectively removed(205). [Reference numerals] (201) Station arrangement; (203) Tungsten containing matter; (205) Deposited layer is selectively raised; (207) Another cycle?; (209) Process variable change; (213) Specialty charging; (AA) Start; (BB) Yes; (CC) No; (DD) Stop