METHOD FOR DEPOSITING SILICON CARBIDE FILM

• Main Authors: JIANG YOUSONG, SUGAWARA TAKUYA, SHIONO ICHIRO, NAGAE EKISHU, AOSHIMA HIKARU
• Format: Patent
• Language: English; Korean
• Published: 28.06.2013
• Subjects: CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS; OPTICS; PHYSICS; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

A film deposition method of a silicon carbide thin film having a high transmissivity and high film strength applicable for optical use purposes is provided, by which a film can be formed safely and efficiently in a short time also on a substrate having low heat resistance,. The method of the present invention is a method for depositing a silicon carbide thin film on a moving substrate S by using a film formation apparatus 1 configured that a reaction process region 60 and film formation process regions 20 and 40 are arranged spatially separated from one another in a vacuum container 11 and processing in the regions 20, 40 and 60 can be controlled independently, wherein silicon targets 29a and 29b are sputtered in the region 20 and carbon targets 49a and 49b are sputtered in the region 40. Thereby, an interlayer thin film containing silicon and carbon is formed on the substrate S. Next, in the region 60, the interlayer thin film is exposed to plasma generated in an atmosphere of a mixed gas of an inert gas and hydrogen so as to convert the interlayer thin film into an ultrathin film. Then, the ultrathin film is subjected to successive formation of another interlayer thin film and successive film conversion into an ultrathin film repeatedly.