CHEMICAL VAPOR DEPOSITION FILM PROFILE UNIFORMITY CONTROL

• Main Authors: CHEN CHIA HO, LIN CHIN HSIANG, CHOU YOU HUA, KUO MING SHIOU, LEE CHIH TSUNG, TSAI MING CHIN
• Format: Patent
• Language: English; Korean
• Published: 17.06.2013
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PURPOSE: A chemical vapor deposition film profile uniformity control is provided to locally control a layer profile in order to perform a subsequent process such as an etching process or CMP process. CONSTITUTION: A first layer having a first profile is deposited on a substrate by CVD using a first showerhead(102). A second shower head having a second shower head aperture design related to a second profile is selected to control the first profile(104). A second layer having the second profile is deposited on the first layer by the CVD using the second shower head(106). The combination layer of the first and the second layer has a third profile which is flatter than the first profile and the second profile. [Reference numerals] (102) Deposit a first layer having a first profile on a substrate by CVD with a first shower head; (104) Select a second shower head having a second shower head aperture design associated with a second profile for adjusting the first profile; (106) Deposit a second layer having the second profile on the first layer by CVD with the second shower head, wherein the combined first layer and the second layer have a third profile which is more planar than the first profile and/or the second profile