SILICON-CONTAINING RESIST UNDERLAYER FILM-FORMING COMPOSITION AND PATTERNING PROCESS

PURPOSE: A composition for forming a silicon-containing underlayer and a pattern forming method are provided to form a silicon-containing film which is used as an effective dry-etching mask between a photo-resist film and an organic film. CONSTITUTION: A composition for forming a silicon-containing...

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Bibliographic Details
Main Authors OGIHARA TSUTOMU, UEDA TAKAFUMI, TANEDA YOSHINORI
Format Patent
LanguageEnglish
Korean
Published 07.06.2013
Subjects
APPARATUS SPECIALLY ADAPTED THEREFOR
CINEMATOGRAPHY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
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Summary:PURPOSE: A composition for forming a silicon-containing underlayer and a pattern forming method are provided to form a silicon-containing film which is used as an effective dry-etching mask between a photo-resist film and an organic film. CONSTITUTION: A composition for forming a silicon-containing underlayer includes a condensate of a mixture and/or a hydrolyzed condensate containing one or more compounds selected from an organic boron compound represented by chemical formula 1 and the condensate of the same and one or more silicon compounds represented by chemical formula 2. In the chemical formulas, R is a C1-6 organic group, and two or more ORs combine to possibly form a cyclic organic group; R1 is a C1-30 organic group, and two or more R1s combine to possibly form a cyclic organic group; R13 is a C1-6 organic group; and R10, R11, R12 are respectively hydrogen or a C1-30 monovalent organic group.
Bibliography:Application Number: KR20120135296